IRFPS3815
20
16
12
8
12000
I
D
= 58A
V
= 0V,
f = 1 MHZ
GS
V
V
V
= 120V
= 75V
= 30V
C
= C + C
,
C
ds
SHORTED
DS
DS
DS
iss
gs
gd
C
= C
10000
8000
6000
4000
2000
0
rss
gd
C
= C + C
Ciss
oss
ds
gd
Coss
Crss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
100
200
300
400
1
10
100
1000
Q
, Total Gate Charge (nC)
G
V
DS
, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
10000
1000
100
10
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
°
T = 175 C
J
10us
100us
°
T = 25 C
J
1ms
10ms
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
V
= 0 V
GS
1.6
0.1
0.0
1
0.4
0.8
1.2
2.0
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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