IRFP460APbF
20
16
12
8
100000
20A
I = 19A
D
V
C
C
C
= 0V,
f = 1MHz
GS
iss
rss
oss
= C + C , C SHORTED
gs
gd
ds
V
V
V
= 400V
= 250V
= 100V
DS
DS
DS
= C
gd
= C + C
ds
gd
10000
1000
100
10
C
iss
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
1
0
A
0
20
40
60
80
100
1
10
100
1000
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10
10us
100us
1ms
°
T = 25 C
J
1
°
T = 25 C
C
°
T = 150 C
Single Pulse
10ms
1000
J
V
= 0 V
GS
1.4
1
0.1
0.2
10
100
10000
0.4
0.6
0.8
1.0
1.2
1.6
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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