IRFP460APbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
500 ––– –––
––– 0.61 –––
––– ––– 0.27
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 12A
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Ω
2.0
––– 4.0
V
VDS = VGS, ID = 250µA
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
VDS = 500V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = 30V
IGSS
nA
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 12A
ID = 20A
gfs
11 ––– –––
S
Qg
––– ––– 105
––– ––– 26
––– ––– 42
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
18 –––
55 –––
45 –––
39 –––
VDD = 250V
ID = 20A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 4.3Ω
RD = 13Ω,See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 3100 –––
––– 480 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
18 –––
pF
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V ꢀ
––– 4430 –––
––– 130 –––
––– 140 –––
Coss eff.
Avalanche Characteristics
Parameter
Typ.
Max.
960
20
Units
mJ
EAS
IAR
Single Pulse Avalanche Energy
–––
–––
–––
Avalanche Current
A
EAR
Repetitive Avalanche Energy
28
mJ
Thermal Resistance
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.45
–––
40
Units
RθJC
RθCS
RθJA
°C/W
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
20
80
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.8
––– 480 710
––– 5.0 7.5
V
TJ = 25°C, IS = 20A, VGS = 0V
ns
TJ = 25°C, IF = 20A
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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