IRFBC40AS
100000
20
V
GS
, Gate-to-Source Voltage (V)
10000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + C
ds gd
I
D
= 5.9A
V
DS
= 480V
V
DS
= 300V
V
DS
= 120V
16
C, Capacitance(pF)
1000
Ciss
12
100
Coss
8
10
Crss
4
1
1
10
100
1000
0
0
8
16
FOR TEST CIRCUIT
SEE FIGURE 13
24
32
40
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
10
T
J
= 150
°
C
I
D
, Drain Current (A)
10
100us
T
J
= 25
°
C
1
1ms
1
10ms
0.1
0.4
V
GS
= 0 V
0.6
0.8
1.0
1.2
0.1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
10
100
1000
10000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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