PD- 91897A
SMPS MOSFET
IRFBC40AS
HEXFET
®
Power MOSFET
Applications
l
Switch Mode Power Supply ( SMPS )
l
Uninterruptable Power Supply
l
High speed power switching
Benefits
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
l
Effective Coss Specified ( See AN 1001)
V
DSS
600V
Rds(on) max
1.2Ω
I
D
6.2A
D
2
P ak
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
6.2
3.9
25
125
1.0
± 30
6.0
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topology:
l
Single transistor Forward
Notes
through
are on page 9
www.irf.com
1
6/29/99
IRF [ INTERNATIONAL RECTIFIER ]
