PD - 97097
IRFB3206PbF
IRFS3206PbF
IRFSL3206PbF
HEXFET
®
Power MOSFET
Applications
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
Benefits
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
D
G
S
V
DSS
R
DS(on)
typ.
max.
I
D
D
D
60V
2.4m
:
3.0m
:
210A
D
G
D
S
G
D
S
G
D
S
TO-220AB
IRFB3206PbF
G
D
2
Pak
IRFS3206PbF
D
TO-262
IRFSL3206PbF
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
d
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
f
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
210c
150c
840
300
2.0
± 20
5.0
-55 to + 175
300
10lbxin (1.1Nxm)
Units
A
W
W/°C
V
V/ns
°C
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
e
Avalanche Current
c
Repetitive Avalanche Energy
g
200
See Fig. 14, 15, 22a, 22b,
mJ
A
mJ
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
R
θJA
Parameter
Junction-to-Case
k
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220
k
Junction-to-Ambient (PCB Mount) , D Pak
jk
2
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
°C/W
www.irf.com
1
6/5/06
IRF [ INTERNATIONAL RECTIFIER ]
