PD- 92006A
SMPS MOSFET
IRF830AS/L
HEXFET
®
Power MOSFET
Applications
l
Switch Mode Power Supply (SMPS)
l
Uninterruptable Power Supply
l
High Speed Power Switching
Benefits
l
Low Gate Charge Qg Results in Simple
Drive Requirement
l
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
l
Effective Coss specified (See AN 1001)
V
DSS
500V
R
DS(on)
max
1.40Ω
I
D
5.0A
D
2
Pak
TO-262
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
5.0
3.2
20
3.1
74
0.59
± 30
5.3
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies:
l
l
Two Transistor Forward
Half Bridge and Full Bridge
Notes
through
are on page 10
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