IRF830AS/LPbF
1 5V
500
E
AS
, Single Pulse Avalanche Energy (mJ)
VDS
L
D R IV E R
400
TOP
BOTTOM
ID
2.2A
3.2A
5.0A
RG
20V
D .U .T
IA
S
tp
+
V
- DD
300
A
0 .0 1
Ω
200
Fig 12a.
Unclamped Inductive Test Circuit
V
(B R )D SS
tp
100
0
25
50
75
100
125
150
Starting T
J
, Junction Temperature (
°
C)
I
AS
Fig 12b.
Unclamped Inductive Waveforms
Q
G
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
10 V
Q
GS
Q
GD
V
D S a v
, A valanche V oltage (V )
790
V
G
785
Charge
Fig 13a.
Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
780
50KΩ
12V
.2µF
.3µF
775
D.U.T.
V
GS
3mA
+
V
-
DS
770
0.0
1.0
2.0
3.0
4.0
5.0
A
I
a v
, A v alanc he C urrent (A )
I
G
I
D
Current Sampling Resistors
Fig 13b.
Gate Charge Test Circuit
Fig 12d.
Typical Drain-to-Source Voltage
Vs. Avalanche Current
6
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