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IRF830ASTRRPBF 参数 Datasheet PDF下载

IRF830ASTRRPBF图片预览
型号: IRF830ASTRRPBF
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3]
分类和应用:
文件页数/大小: 10 页 / 667 K
品牌: INFINEON [ Infineon ]
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IRF830AS/LPbF  
D2Pak Tape & Reel Information  
TRR  
1 .6 0 (.063 )  
1 .5 0 (.059 )  
1.60 (.06 3)  
1.50 (.05 9)  
4.10 (.161)  
3.90 (.153)  
0.368 (.0145)  
0.342 (.0135)  
FE ED DIR EC TION  
TRL  
11.60 (.457)  
11.40 (.449)  
1.85 (.0 73)  
1.65 (.0 65)  
24.30 (.957)  
23.90 (.941)  
15.42 (.609)  
15.22 (.601)  
1.75 (.069 )  
1.25 (.049 )  
10.90 (.429)  
10.70 (.421)  
4.72 (.1 36)  
4.52 (.1 78)  
16.10 (.634)  
15.90 (.626)  
FEED DIRE CTIO N  
13.50 (.532)  
12.80 (.504)  
27.40 (1.079)  
23.90 (.941)  
4
330.00  
(14.173)  
MAX.  
60.00 (2.362)  
MIN.  
30.40 (1.197)  
MAX.  
NOTES  
:
1. COM FORM S TO EIA-418.  
2. CONTROLLING DIMENSIO N: M ILLIMETER.  
3. DIM ENSION MEASURED  
4. INCLUDES FLANGE DISTORTIO N  
26.40 (1.039)  
24.40 (.961)  
4
@ HUB.  
3
@
O UTER EDG E.  
Notes:  
Repetitive rating; pulse width limited by  
„Pulse width 300µs; duty cycle 2%.  
max. junction temperature. ( See fig. 11 )  
‚Starting TJ = 25°C, L = 18mH  
Coss eff. is a fixed capacitance that gives the same charging time  
RG = 25, IAS = 5.0A. (See Figure 12)  
as Coss while VDS is rising from 0 to 80% VDSS  
ƒISD 5.0A, di/dt 370A/µs, VDD V(BR)DSS  
TJ 150°C  
,
†Uses IRF830A data and test conditions  
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).  
For recommended footprint and soldering techniques refer to application note #AN-994.  
Data and specifications subject to change without notice.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information. 04/04  
10  
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