IRF7822PbF
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage
Static Drain-Source
on Resistance
Gate Threshold Voltage
Drain-Source Leakage
Current
BV
DSS
R
DS(on)
V
GS(th)
I
DSS
1.0
30
150
I
GSS
Q
G
Q
G
Q
GS1
Q
GS2
Q
GD
Q
sw
Q
oss
R
G
t
d (on)
t
r
t
d
t
f
C
iss
C
oss
–
–
–
(off)
Min
30
Typ
–
5.0
Max
–
6.5
Units
V
m
Ω
V
µA
nA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 4.5V, I
D
= 15A
V
DS
= V
GS
,I
D
= 250µA
V
DS
= 24V, V
GS
= 0
V
DS
= 24V, V
GS
= 0,
Tj = 100°C
V
GS
= ±12V
V
GS
=5.0V, I
D
=15A, V
DS
=16V
V
GS
= 5.0V, V
DS
< 100mV
V
DS
= 16V, I
D
= 15A
Current*
Gate-Source Leakage
Current
Total Gate Chg Cont FET
Total Gate Chg Sync FET
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
±100
44
38
13
3.0
9.0
12
27
1.5
15
5.5
22
12
5500
1000
300
–
–
–
60
nC
V
DS
= 16V, V
GS
= 0
Ω
V
DD
= 16V, I
D
= 15A
ns
V
GS
= 5.0V
Clamped Inductive Load
pF
V
DS
= 16V, V
GS
= 0
Reverse Transfer Capacitance C
rss
Source-Drain Rating & Characteristics
Parameter
Diode Forward
Voltage*
Reverse Recovery
Charge
Reverse Recovery
Charge (with Parallel
Schottky)
V
SD
Q
rr
Q
rr(s)
120
108
Min
Typ
Max
1.0
Units
V
nC
nC
Conditions
I
S
= 15A, V
GS
= 0V
di/dt
~
700A/µs
V
DS
= 16V, V
GS
= 0V, I
S
= 15A
di/dt = 700A/µs
(with 10BQ040)
V
DS
= 16V, V
GS
= 0V, I
S
= 15A
Notes:
2
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400 µs; duty cycle
≤
2%.
When mounted on 1 inch square copper board
Typ = measured - Q
oss
Typical values of R
DS
(on) measured at V
GS
= 4.5V, Q
G
, Q
SW
and Q
OSS
measured at V
GS
= 5.0V, I
F
= 15A.
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