PD - 95024
IRF7822PbF
HEXFET
®
Power MOSFET for DC-DC Converters
•
•
•
•
•
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Lead-Free
S
S
S
G
1
2
3
4
8
7
A
D
D
D
D
6
5
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7822 has been optimized for all parameters that
are critical in synchronous buck converters including
R
DS(on)
, gate charge and Cdv/dt-induced turn-on immunity.
The IRF7822 offers particulary low R
DS(on)
and high Cdv/
dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
SO-8
T o p V ie w
DEVICE CHARACTERISTICS
IRF7822
R
DS
(on)
Q
G
Q
sw
Q
oss
5.0mΩ
44nC
12nC
27nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
GS
≥
4.5V)
Pulsed Drain Current
Power Dissipation
T
A
= 25°C
T
A
= 70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
R
θJA
R
θJL
Max.
40
20
Units
°C/W
°C/W
T
J
, T
STG
I
S
I
SM
T
A
= 25°C
T
A
= 70°C
I
DM
P
D
Symbol
V
DS
V
GS
I
D
IRF7822
30
±12
18
13
150
3.1
3.0
–55 to 150
3.8
150
°C
A
W
A
Units
V
www.irf.com
1
9/30/04
IRF [ INTERNATIONAL RECTIFIER ]
