IRF7821PbF
RDS(on), Drain-to -Source On Resistance ( mΩ)
30
100
EAS, Single Pulse Avalanche Energy (mJ)
ID = 13A
25
ID
4.5A
8.0A
BOTTOM
10A
TOP
80
20
60
15
T J = 125°C
10
40
5
T J = 25°C
20
0
2.0
4.0
6.0
8.0
10.0
0
25
50
75
100
125
150
VGS, Gate-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
On-Resistance Vs. Gate Voltage
Fig 13c.
Maximum Avalanche Energy
Vs. Drain Current
L
D
15V
V
DS
VDS
L
DRIVER
V
DD
D.U.T
RG
V
GS
20V
D.U.T
IAS
tp
+
V
- DD
V
GS
A
0.01
Ω
Pulse Width < 1µs
Duty Factor < 0.1%
Fig 13a.
Unclamped Inductive Test Circuit
V
(BR)DSS
tp
Fig 14a.
Switching Time Test Circuit
90%
V
DS
10%
V
GS
I
AS
t
d(on)
t
f
t
d(off)
t
r
Fig 13b.
Unclamped Inductive Waveforms
Fig 14b.
Switching Time Waveforms
6
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