IRF7821PbF
10000
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
12
ID= 10A
10
8
6
4
2
0
VDS= 24V
VDS= 15V
C, Capacitance (pF)
1000
Ciss
Coss
100
Crss
10
1
10
100
0
5
10
15
20
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
10.0
T J = 150°C
ID, Drain-to-Source Current (A)
100
10
100µsec
1msec
1.0
T J = 25°C
VGS = 0V
0.1
0.0
0.5
1.0
1.5
VSD, Source-toDrain Voltage (V)
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1.0
10.0
10msec
0.1
100.0
1000.0
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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