IRF7805QPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
VGS = 4.5V, ID = 7.0A
VDS = VGS, ID = 250µA
Drain-to-Source Breakdown Voltage
BVDSS
RDS(on)
VGS(th)
IDSS
30
–––
9.2
–––
–––
–––
–––
–––
–––
22
–––
V
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
1.0
11
Ω
m
3.0
70
V
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
V
V
DS = 30V, VGS = 0V
10
DS = 24V, VGS = 0V
µA
150
100
-100
31
DS = 24V, VGS = 0V, TJ = 100°C
IGSS
Gate-to-Source Forward Leakage
VGS = 12V
VGS = -12V
nA
nC
Gate-to-Source Reverse Leakage
Total Gate Charge
Qg
VGS = 5.0V
Qgs1
Qgs2
Qgd
Qsw
Qoss
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Switch Charge (Qgs2 + Qgd)
Output Charge
3.7
1.4
6.8
8.2
3.0
–––
–––
–––
11.5
3.6
VDS = 16V
ID = 7.0A
nC
VDS = 16V, VGS = 0V
RG
td(on)
tr
Gate Resistance
Turn-On Delay Time
Rise Time
0.5
–––
–––
–––
–––
1.7
–––
–––
–––
–––
Ω
–––
16
V
DD = 16V, VGS = 4.5V
20
38
16
ID = 7.0A
ns
td(off)
tf
Ω
Turn-Off Delay Time
Fall Time
RG= 2
Resistive Load
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
2.5
MOSFET symbol
–––
–––
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
ISM
–––
–––
–––
–––
106
1.2
(Body Diode)
Diode Forward Voltage
p-n junction diode.
T = 25°C, I = 7.0A, V = 0V
J S GS
VSD
Qrr
–––
88
V
Reverse Recovery Charge
di/dt = 700A/µs
= 16V, V = 0V, I = 7.0A
–––
ns
V
DS
GS
S
Qrr(s)
Reverse Recovery Charge
(with Parallel Schottky)
55
di/dt = 700A/µs (with 10BQ040)
–––
–––
nC
V
DS
= 16V, V = 0V, I = 7.0A
GS
S
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Qoss
ꢀ
Rθ is measured at T of approximately 90°C.
Devices are 100% tJested to these parameters.
2
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INFINEON [ Infineon ]
