PD – 96114
IRF7805QPbF
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Advanced Process Technology
Ultra Low On-Resistance
N Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
SO-8
S
S
S
G
1
2
3
4
8
7
A
D
D
D
D
6
5
Description
Specifically designed for Automotive applications, these
HEXFET
®
Power MOSFET's in package utilize the lastest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power
applications. This surface mount SO-8 can dramatically
reduce board space and is also available
in Tape & Reel.
T o p V ie w
Device Features
IRF7805Q
V
DS
30V
R
DS(on)
11mΩ
Qg
31nC
Qsw
11.5nC
Qoss
36nC
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Max.
30
± 12
13
10
100
2.5
1.6
0.02
-55 to + 150
Units
V
e
Power Dissipation
e
Power Dissipation
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
c
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
R
θJL
R
θJA
h
Junction-to-Ambient
eh
Junction-to-Drain Lead
Parameter
Typ.
–––
–––
Max.
20
50
Units
°C/W
www.irf.com
1
07/23/07
IRF [ INTERNATIONAL RECTIFIER ]
