IRF7416
4000
-V
G S
, G a te -to -S o u rce V o lta g e (V )
V
GS
C
is s
C
rss
C
oss
= 0 V,
f = 1M H z
= C
gs
+ C
gd
, C
ds
SH OR TE D
= C
gd
= C
d s
+ C
gd
20
I
D
= -5.6 A
V
DS
= -24 V
V
DS
= -15 V
16
C , C a p a c ita n c e (p F )
3000
C
i ss
2000
12
C
os s
8
1000
C
rss
4
0
1
10
100
A
0
0
20
40
FO R TEST C IR C U IT
SEE F IGU R E 9
60
80
A
100
V
D S
, D rain-to-S ource Voltage (V )
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I
S D
, R e ve rse D ra in C u rre n t (A )
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-I D , Drain Current (A)
I
100us
T
J
= 1 50°C
10
10
1ms
T
J
= 25 °C
1
0.4
0.6
0.8
1.0
V
G S
= 0 V
A
1.2
1
0.1
T
A
= 25 °C
T
J
= 150 ° C
Single Pulse
1
10
10ms
100
-V
S D
, S ource-to-Drain V oltage (V )
-V DS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRF [ INTERNATIONAL RECTIFIER ]
