IRF7416
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
-30
–––
–––
–––
-1.0
5.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= -250µA
-0.024 ––– V/°C Reference to 25°C, I
D
= -1mA
––– 0.020
V
GS
= -10V, I
D
= -5.6A
Ω
––– 0.035
V
GS
= -4.5V, I
D
= -2.8A
––– –––
V
V
DS
= V
GS
, I
D
= -250µA
––– –––
S
V
DS
= -10V, I
D
= -2.8A
––– -1.0
V
DS
= -24V, V
GS
= 0V
µA
––– -25
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
––– -100
V
GS
= -20V
nA
––– 100
V
GS
= 20V
61
92
I
D
= -5.6A
8.0
12
nC
V
DS
= -24V
22
32
V
GS
= -10V, See Fig. 6 and 9
18 –––
V
DD
= -15V
49 –––
I
D
= -5.6A
ns
59 –––
R
G
= 6.2Ω
60 –––
R
D
= 2.7Ω, See Fig. 10
1700 –––
V
GS
= 0V
890 –––
pF
V
DS
= -25V
410 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
56
99
-3.1
A
-45
-1.0
85
150
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -5.6A, V
GS
= 0V
T
J
= 25°C, I
F
= -5.6A
di/dt = 100A/µs
D
G
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
-5.6A, di/dt
≤
100A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Starting T
J
= 25°C, L = 25mH
R
G
= 25Ω, I
AS
= -5.6A. (See Figure 12)
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
10sec.
IRF [ INTERNATIONAL RECTIFIER ]
