IRF7401PbF
3000
2500
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
I
D
= 4.1A
V
DS
= 16V
8
C, Capacitance (pF)
2000
C
iss
6
1500
C
oss
4
1000
C
rss
500
2
0
1
10
100
A
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 12
30
40
50
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 25°C
T
J
= 150°C
10
I
D
, Drain Current (A)
100us
10
1ms
1
10ms
0.1
0.0
1.0
2.0
3.0
V
GS
= 0V
A
4.0
1
0.1
T
A
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
100
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRF [ INTERNATIONAL RECTIFIER ]
