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IRF7401PBF 参数 Datasheet PDF下载

IRF7401PBF图片预览
型号: IRF7401PBF
PDF下载: 下载PDF文件 查看货源
内容描述: HEXFET㈢功率MOSFET [HEXFET㈢ Power MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管
文件页数/大小: 9 页 / 197 K
品牌: IRF [ INTERNATIONAL RECTIFIER ]
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PD - 95724
IRF7401PbF
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Generation V Technology
Ultra Low On-Resistance
N-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
HEXFET
®
Power MOSFET
S
S
S
G
1
8
7
A
A
D
D
D
D
2
V
DSS
= 20V
R
DS(on)
= 0.022Ω
3
6
4
5
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J,
T
STG
10 Sec. Pulsed Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
‚
Junction and Storage Temperature Range
Max.
10
8.7
7.0
35
2.5
0.02
± 12
5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
R
θJA
Maximum Junction-to-Ambient„
Typ.
–––
Max.
50
Units
°C/W
8/10/04