PD - 96102A
IRF7105QPbF
HEXFET
®
Power MOSFET
l
l
l
l
l
l
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Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
S1
G1
S2
G2
N-CHANNEL MOSFET
1
8
2
3
4
7
6
5
D1
D1
D2
D2
N-Ch
V
DSS
R
DS(on)
I
D
25V
0.10Ω
3.5A
P-Ch
-25V
0.25Ω
-2.3A
P-CHANNEL MOSFET
Top View
Description
These HEXFET
®
Power MOSFET's in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to
make this design an extremely efficient and reliable device
for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available
in Tape & Reel.
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
N-Channel
3.5
2.8
14
2.0
0.016
± 20
3.0
-55 to + 150
-3.0
P-Channel
-2.3
-1.8
-10
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
R
θJA
Maximum Junction-to-Ambient
Parameter
Min.
Typ.
Max.
62.5
Units
°C/W
www.irf.com
1
08/02/10
IRF [ INTERNATIONAL RECTIFIER ]
