IRF4905S/L
VDS
L
600
EAS, Single Pulse Avalanche Energy (mJ)
R
G
D.U.T
IAS
-20V
DRIVER
0.01
Ω
VDD
A
500
tp
-17A
-30A
BOTTOM
-42A
TOP
ID
400
300
15V
200
Fig 12a.
Unclamped Inductive Test Circuit
I
AS
100
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
tp
V
(BR)DSS
Fig 12b.
Unclamped Inductive Waveforms
Q
G
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
10V
V
G
3.6
Q
GS
Q
GD
-VGS(th) Gate threshold Voltage (V)
3.2
Charge
Fig 13a.
Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
2.8
ID = -250µA
50KΩ
12V
.2µF
.3µF
2.4
V
GS
-3mA
I
G
I
D
Current Sampling Resistors
Fig 13b.
Gate Charge Test Circuit
6
+
D.U.T.
-
V
DS
2.0
-75
-50
-25
0
25
50
75
100
125
150
TJ , Temperature ( °C )
Fig 14.
Threshold Voltage Vs. Temperature
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