IRF4905S/L
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
-55
–––
–––
-2.0
19
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-0.054
–––
–––
–––
–––
–––
–––
–––
120
32
53
20
99
51
64
7.5
3500
1250
450
4620
940
1530
–––
–––
20
-4.0
–––
-25
-200
100
-100
180
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
nH
ns
nC
nA
V
mΩ
V
S
µA
Conditions
V
GS
= 0V, I
D
= -250µA
V
GS
= -10V, I
D
= -42A
V
DS
= -25V, I
D
= -42A
V
DS
= -55V, V
GS
= 0V
V
DS
= -44V, V
GS
= 0V, T
J
= 125°C
V
GS
= -20V
V
GS
= 20V
I
D
= -42A
V
DS
= -44V
V
GS
= -10V
V
DD
= -28V
I
D
= -42A
R
G
= 2.6
Ω
V
GS
= -10V
V/°C Reference to 25°C, I
D
= -1mA
e
V
DS
= V
GS
, I
D
= -250µA
e
e
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= -1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= -44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to -44V
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
61
150
-42
A
-280
-1.3
92
220
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -42A, V
GS
= 0V
di/dt = -100A/µs
Ã
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
e
T
J
= 25°C, I
F
= -42A, V
DD
= -28V
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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