IRF4905PbF
7000
6000
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -38A
V
DS
= -44V
V
DS
= -28V
16
C, Capacitance (pF)
5000
C
iss
C
oss
4000
12
3000
8
2000
C
rss
4
1000
0
1
10
100
A
0
0
40
80
FOR TEST CIRCUIT
SEE FIGURE 13
120
160
200
A
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
-I
D
, Drain Current (A)
100
100µs
T
J
= 175°C
T
J
= 25°C
10
1ms
10
10ms
1
0.4
0.6
0.8
1.0
1.2
1.4
V
GS
= 0V
1.6
A
1.8
1
1
T
C
= 25°C
T
J
= 175°C
Single Pulse
10
100
A
-V
SD
, Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRF [ INTERNATIONAL RECTIFIER ]
