IRF3710Z/S/LPbF
100000
V
GS = 0V,
C
iss
C rss
V GS, Gate-to-Source Voltage (V)
f = 1 MHZ
=C + C , C
gs
gd
ds
= Cgd
12.0
SHORTED
ID= 35A
10.0
8.0
6.0
4.0
2.0
0.0
0
20
V DS= 80V
V DS= 50V
V DS= 20V
10000
C
oss
=C +C
ds
gd
C, Capacitance(pF)
Ciss
1000
Coss
100
Crss
10
1
10
100
40
60
80
100
V DS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
1000
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100.00
TJ = 175°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec
10
10.00
TJ = 25°C
1.00
1
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
10msec
0.10
0.2
0.4
0.6
0.8
1.0
1.2
V GS = 0V
1.4
1.6
0.1
100
1000
V DS , Drain-toSource Voltage (V)
V SD, Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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