IRF3710Z/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
∆ΒVDSS/∆TJ
RDS(on)
100
–––
0.10
14
–––
V
Breakdown Voltage Temp. Coefficient –––
––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
18
4.0
V
GS = 10V, ID = 35A
Ω
m
VGS(th)
–––
–––
–––
–––
–––
–––
82
V
VDS = VGS, ID = 250µA
gfs
IDSS
Forward Transconductance
35
–––
20
S
V
V
V
V
V
DS = 50V, ID = 35A
DS = 100V, VGS = 0V
DS = 100V, VGS = 0V, TJ = 125°C
GS = 20V
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
µA
250
200
-200
120
28
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA
nC
GS = -20V
Qg
Qgs
Qgd
td(on)
tr
ID = 35A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
19
VDS = 80V
27
40
V
GS = 10V
DD = 50V
17
–––
–––
–––
–––
–––
ns
V
Rise Time
77
I
D = 35A
G = 6.8Ω
VGS = 10V
td(off)
tf
Turn-Off Delay Time
41
R
Fall Time
56
LD
Internal Drain Inductance
4.5
nH Between lead,
D
S
6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
pF VGS = 0V
DS = 25V
ƒ = 1.0MHz, See Fig. 5
Ciss
Input Capacitance
––– 2900 –––
Coss
Output Capacitance
–––
–––
290
150
–––
–––
V
Crss
Reverse Transfer Capacitance
Output Capacitance
Coss
––– 1130 –––
V
GS = 0V, VDS = 1.0V, ƒ = 1.0MHz
GS = 0V, VDS = 80V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
–––
170
280
–––
–––
V
Coss eff.
Effective Output Capacitance
VGS = 0V, VDS = 0V to 80V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
IS
Continuous Source Current
–––
–––
59
(Body Diode)
Pulsed Source Current
A
V
showing the
integral reverse
G
ISM
–––
–––
240
(Body Diode)
Diode Forward Voltage
p-n junction diode.
VSD
T = 25°C, I = 35A, V = 0V
–––
–––
1.3
J
S
GS
trr
Qrr
T = 25°C, I = 35A, VDD = 25V
J F
di/dt = 100A/µs
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
50
100
75
160
ns
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.27mH,
RG = 25Ω, IAS = 35A, VGS =10V. Part not
recommended for use above this value.
.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
ISD ≤ 35A, di/dt ≤ 380A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C.
,
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
2
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