IRF3205S/LPbF
6000
16
14
12
10
8
I =
D
62A
V
C
= 0V, f = 1 MHZ
GS
= C + C , C
SHORTED
V
V
V
= 44V
= 27V
= 11V
DS
DS
DS
iss
gs gd ds
C
= C
gd
5000
4000
3000
2000
1000
0
rss
C
= C + C
oss
ds
gd
Ciss
6
Coss
Crss
4
2
0
0
20
40
60
80
100
120
1
10
100
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5ꢀ Typical Capacitance Vsꢀ
Fig 6ꢀ Typical Gate Charge Vsꢀ
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 175 C
J
1000
100
10
10us
100us
°
T = 25 C
J
1ms
1
10ms
°
T = 25 C
J
C
°
T = 175 C
Single Pulse
V
= 0 V
GS
1
0.1
0.2
1
10
100
1000
0.8
1.4
2.0
2.6
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 7ꢀ Typical Source-Drain Diode
Fig 8ꢀ Maximum Safe Operating Area
Forward Voltage
4
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