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100JB120L 参数 Datasheet PDF下载

100JB120L图片预览
型号: 100JB120L
PDF下载: 下载PDF文件 查看货源
内容描述: [Bridge Rectifier Diode, 10A, 12000V V(RRM),]
分类和应用: 二极管
文件页数/大小: 6 页 / 64 K
品牌: IRF [ INTERNATIONAL RECTIFIER ]
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MB & JB Series
Bulletin I2715 rev. E 08/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
5
10
100JB..L
26MB..A
250JB..L
36MB..A
35MB..A
20
40
60
80
100
120
140
160
V
RRM
, maximum repetitive
peak reverse voltage
V
50
100
200
400
600
800
1000
1200
1400
1600
V
RSM
, maximum non-
repetitive peak rev. voltage
V
75
150
275
500
725
900
1100
1300
1500
1700
I
RRM
max.
@ T
J
max.
mA
2
Forward Conduction
Parameters
I
O
Maximum DC output current
@ Case temperature
I
FSM
Maximum peak, one-cycle
non-repetitive forward current
100JB-L 26MB-A 36MB-A
Units Conditions
250JB-L 35MB-A
10
8
65
148
155
125
130
It
2
25
20
65
400
420
335
350
790
725
560
512
5.6
0.76
0.92
6.8
5.0
1.11
10
2700
35
28
60
475
500
400
420
1130
1030
800
730
11.3
0.79
0.96
5.8
4.5
1.14
10
2700
A
A
°C
A
Resistive or inductive load
Capacitive load
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Initial T
J
= T
J
max.
Maximum I t for fusing
2
110
100
78
71
As
2
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
I
√t
2
Maximum I
√t
for fusing
2
1.1
1.00
1.17
15.4
10.8
1.3
10
2700
KA
√s
2
I t for time t
x
= I
2
√t
x
√t
x
;
0.1
t
x
10ms, V
RRM
= 0V
2
V
F(TO)1
V
F(TO)2
r
t1
r
t2
V
FM
I
RRM
V
INS
Low-level of threshold voltage
High-level of threshold voltage
Low-level forward slope resistance
High-level forward slope resistance
Maximum forward voltage drop
Max. DC reverse current
RMS isolation voltage base plate
V
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), @ T
J
max.
(I >
π
x I
F(AV)
), @ T
J
max.
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), @ T
J
max.
(I >
π
x I
F(AV)
), @ T
J
max.
T
J
= 25
o
C, I
=I
x
π,
tp = 400µs
mΩ
V
µA
V
FM
Favg (arm)
T
J
= 25
o
C, per diode at V
RRM
f = 50 Hz, t = 1s
2
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