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IPT1206-BEF 参数 Datasheet PDF下载

IPT1206-BEF图片预览
型号: IPT1206-BEF
PDF下载: 下载PDF文件 查看货源
内容描述: 高的电流密度,由于增加一倍台面技术 [High current density due to double mesa technology]
分类和应用:
文件页数/大小: 4 页 / 221 K
品牌: IPS [ IP SEMICONDUCTOR CO., LTD. ]
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IP Semiconductor Co., Ltd.  
IPT1206-xxF  
High current density due to double mesa technology; SIPOS  
and Glass Passivation. IPT1206-xx series are suitable for  
general purpose AC Switching. They can be used as an  
ON/OFF function In application such as static relays,  
heating regulation, Induction motor stating circuits… or  
for phase Control operation light dimmers, motor speed  
Controllers.  
The IPT1206-xxF(Insulated version) series are isolated  
internally, they provided a 2500V RMS isolation voltage from  
all three terminals to external heatsink..  
MAIN FEATURES  
Symbol  
IT(RMS)  
Value  
12  
Unit  
A
VDRM / VRRM  
VTM  
600  
V
≤ 1.55  
V
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
Storage Junction Temperature Range  
Operating Junction Temperature Range  
Tstg  
Tj  
-40 to +150  
-40 to +125  
V
Repetitive Peak Off-state Voltage  
Repetitive Peak Reverse Voltage  
Tj = 25  
VDRM  
VRRM  
600  
600  
Non Repetitive Peak Off-state Voltage  
Non Repetitive Peak Reverse Voltage  
Tj = 25℃  
VDSM  
VRSM  
700  
700  
V
RMS onstate current  
Tc = 79 ℃  
IT(RMS)  
12  
A
(Full sine wave)  
Non repetitive surge peak onstate Current f = 60Hz t = 16.7ms  
126  
120  
ITSM  
A
(full cycle, Tj = 25)  
f = 50 Hz t = 20ms  
I²t  
78  
50  
A²s  
A/us  
I²t Value for fusing  
tp = 10ms  
Critical Rate of rise of on-state current  
dI / dt  
IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃  
IGM  
4
1
A
Peak gate current  
tp = 20us, Tj = 125 ℃  
Tj = 125 ℃  
Average gate power dissipation  
PG(AV)  
W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea  
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com  
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