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IPT04Q08-DEI 参数 Datasheet PDF下载

IPT04Q08-DEI图片预览
型号: IPT04Q08-DEI
PDF下载: 下载PDF文件 查看货源
内容描述: 高的电流密度,由于增加一倍台面技术 [High current density due to double mesa technology]
分类和应用:
文件页数/大小: 4 页 / 228 K
品牌: IPS [ IP SEMICONDUCTOR CO., LTD. ]
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IP Semiconductor Co., Ltd.  
IPT04Q08-xxI  
High current density due to double mesa technology;  
SIPOS and Glass Passivation. IPT04Q08-xx series are  
suitable for general purpose AC Switching.  
They can be used as an ON/OFF function In application  
such as static relays, heating regulation, Induction  
motor stating circuits… or for phase Control operation  
light dimmers, motor speed Controllers.  
IPAK(TO-251)  
MAIN FEATURES  
Symbol  
IT(RMS)  
Value  
4
Unit  
A
VDRM / VRRM  
IGT  
800  
V
5 to 25  
mA  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
Storage Junction Temperature Range  
Operating Junction Temperature Range  
Tstg  
Tj  
-40 to +150  
-40 to +125  
V
Repetitive Peak Off-state Voltage  
Repetitive Peak Reverse Voltage  
Tj = 25  
VDRM  
VRRM  
800  
800  
Non Repetitive Peak Off-state Voltage  
Non Repetitive Peak Reverse Voltage  
Tj = 25℃  
VDSM  
VRSM  
900  
900  
V
RMS onstate current  
Tc =105℃  
IT(RMS)  
4
A
(Full sine wave)  
Non repetitive surge peak onstate Current f = 60Hz t = 16.7ms  
38  
35  
ITSM  
A
(full cycle, Tj = 25)  
f = 50 Hz t = 20ms  
I²t  
6
A²s  
A/us  
I²t Value for fusing  
tp = 10ms  
Critical Rate of rise of on-state current  
dI / dt  
50  
IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃  
IGM  
4
1
A
Peak gate current  
tp = 20us, Tj = 125 ℃  
Tj = 125 ℃  
Average gate power dissipation  
PG(AV)  
W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea  
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com  
1