HA-4741
Die Characteristics
DIE DIMENSIONS:
SUBSTRATE POTENTIAL (Powered Up):
87 mils x 75 mils x 19 mils
V-
2210µm x 1910µm x 483µm
TRANSISTOR COUNT:
72
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ±2kÅ
PROCESS:
Junction Isolated Bipolar/JFET
PASSIVATION:
Type: Nitride (Si N ) over Silox (SiO , 5% Phos.)
3
4
2
Silox Thickness: 12kÅ ±2kÅ
Nitride Thickness: 3.5kÅ ±1.5kÅ
Metallization Mask Layout
HA-4741
V-
-IN4
+IN4
+IN3
-IN3
OUT3
OUT2
OUT4
OUT1
-IN1
+IN1
V+ +IN2
-IN2
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