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5962R9676601QYC 参数 Datasheet PDF下载

5962R9676601QYC图片预览
型号: 5962R9676601QYC
PDF下载: 下载PDF文件 查看货源
内容描述: 抗辐射256 ×8 CMOS RAM [Radiation Hardened 256 x 8 CMOS RAM]
分类和应用: 内存集成电路静态存储器
文件页数/大小: 11 页 / 113 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
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HS-81C55RH, HS-81C56RH
TM
Data Sheet
August 2000
File Number
3039.2
Radiation Hardened 256 x 8 CMOS RAM
The HS-81C55/56RH are radiation hardened RAM and I/O
chips fabricated using the Intersil radiation hardened Self-
Aligned Junction Isolated (SAJI) silicon gate technology.
Latch-up free operation is achieved by the use of epitaxial
starting material to eliminate the parasitic SCR effect seen in
conventional bulk CMOS devices.
The HS-81C55/56RH is intended for use with the
HS-80C85RH radiation hardened microprocessor system.
The RAM portion is designed as 2048 static cells organized
as 256 x 8. A maximum post irradiation access time of
500ns allows the HS-81C55/56RH to be used with the
HS-80C85RH CPU without any wait states. The
HS-81C55RH requires an active low chip enable while the
HS-81C56RH requires an active high chip enable. These
chips are designed for operation utilizing a single 5V power
supply.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-96766. A “hot-link” is provided
on our homepage for downloading.
http://www.intersil.com/spacedefense/space.asp
Features
• Electrically Screened to SMD # 5962-96766
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Hardened EPI-CMOS
- Total Dose. . . . . . . . . . . . . . . . . . . . . 100 krad(Si) (Max)
- Transient Upset . . . . . . . . . . . . . . . . . .>1 x 10
8
rad(Si)/s
- Latch-Up Free . . . . . . . . . . . . . . . . . . >1 x 10
12
rad(Si)/s
• Electrically Equivalent to Sandia SA 3001
• Pin Compatible with Intel 8155/56
• Bus Compatible with HS-80C85RH
• Single 5V Power Supply
• Low Standby Current . . . . . . . . . . . . . . . . . . . .200µA Max
• Low Operating Current . . . . . . . . . . . . . . . . . . . . 2mA/MHz
• Completely Static Design
• Internal Address Latches
• Two Programmable 8-Bit I/O Ports
• One Programmable 6-Bit I/O Port
• Programmable 14-Bit Binary Counter/Timer
• Multiplexed Address and Data Bus
• Self Aligned Junction Isolated (SAJI) Process
• Military Temperature Range . . . . . . . . . . . -55
o
C to 125
o
C
Ordering Information
ORDERING NUMBER
5962R9676601QXC
5962R9676601QYC
5962R9676601VXC
5962R9676601VYC
5962R9676602QXC
5962R9676602QYC
5962R9676602VXC
5962R9676602VYC
INTERNAL
MKT. NUMBER
HS1-81C55RH-8
HS9-81C55RH-8
HS1-81C55RH-Q
HS9-81C55RH-Q
HS1-81C56RH-8
HS9-81C56RH-8
HS1-81C56RH-Q
HS9-81C56RH-Q
TEMP. RANGE
(
o
C)
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
Functional Diagram
IO/M
AD0 - AD7
CE OR CE
ALE
RD
WR
RESET
TIMER CLK
TIMER OUT
TIMER
C
PORT C
8
PC0 - PC5
VDD (10V)
GND
256 x 8
STATIC
RAM
A
PORT A
8
PA0 - PA7
PORT B
B
8
PB0 - PB7
81C55RH = CE
81C56RH = CE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
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Intersil and Design is a trademark of Intersil Corporation.
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Copyright © Intersil Corporation 2000