ISL70218SEH
TOP METALLIZATION
Package Characteristics
Weight of Packaged Device
Type: AlCu (99.5%/0.5%)
Thickness: 30kÅ
0. 4029 grams (Typical)
BACKSIDE FINISH
Lid Characteristics
Silicon
Finish: Gold
Case Isolation to Any Lead: 20 x 109 Ω (min)
PROCESS
Dielectrically Isolated Complementary Bipolar - PR40
Die Characteristics
ASSEMBLY RELATED INFORMATION
Die Dimensions
SUBSTRATE POTENTIAL
1565µm x 2125µm (62mils x 84mils)
Thickness: 355µm ± 25µm (14 mils ± 1 mil)
Floating
ADDITIONAL INFORMATION
Interface Materials
WORST CASE CURRENT DENSITY
< 2 x 105 A/cm2
GLASSIVATION
Type: Nitrox
Thickness: 15kÅ
Metallization Mask Layout
V+
OUT_A
OUT_B
-IN_A
+IN_A
PLACE HOLDER
-IN_B
+IN_B
V-
FN7957.1
August 24, 2012
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