HS-26CLV31RH
Die Characteristics
DIE DIMENSIONS:
96.5 mil x 195 mils x 21 mils
(2450 x 4950)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorus Silicon Glass)
Thickness: 8k
Å
±1k
Å
Metallization:
Bottom: Mo/TiW
Thickness: 5800
Å
±
1kÅ
Top: AlSiCu (Top)
Thickness: 10k
Å
±1k
Å
Substrate:
AVLSI1RA
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential (Powered Up):
V
DD
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Bond Pad Size:
110µm x 100µm
Metallization Mask Layout
HS-26CLV31RH
(16) VDD
(16) VDD
(15) DIN
TABLE 1. HS26CLV31RH PAD COORDINATES
RELATIVE TO PIN 1
PIN
NUMBER
1
PAD
NAME
AIN
A0
A0
ENABLE
B0
B0
BIN
GND
GND
CIN
C0
C0
ENABLE
D0
D0
DIN
VIN
VIN
X
Y
COORDINATES COORDINATES
0
0
0
0
0
0
0
852.4
1062.4
1912.8
1912.8
1912.8
1912.8
1912.8
1912.8
1912.8
1062.4
852.4
0
-570.7
-1483.5
-2124.8
-2873.5
-3786.3
-4357
-4357
-4357
-4357
-3786.3
-2873.5
-2124.8
-1483.5
-570.7
0
0
0
(1) AIN
AO (2)
(14) DO
2
3
4
5
AO (3)
(13) DO
6
7
8
8
ENABLE (4)
(12) ENABLE
9
10
11
BO (5)
(11) CO
12
13
14
15
BO (6)
(10) CO
16
16
GND (8)
GND (8)
BIN (7)
3
CIN (9)
NOTE: Dimensions in microns
FN4898.2
May 28, 2009
INTERSIL [ INTERSIL CORPORATION ]
