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2N6975 参数 Datasheet PDF下载

2N6975图片预览
型号: 2N6975
PDF下载: 下载PDF文件 查看货源
内容描述: 5A , 400V和500V N沟道IGBT的 [5A, 400V and 500V N-Channel IGBTs]
分类和应用: 晶体晶体管功率控制双极性晶体管局域网
文件页数/大小: 4 页 / 44 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
 浏览型号2N6975的Datasheet PDF文件第1页浏览型号2N6975的Datasheet PDF文件第2页浏览型号2N6975的Datasheet PDF文件第4页  
2N6975, 2N6976, 2N6977, 2N6978
Typical Performance Curves
EFFECTIVE TRANSIENT THERMAL
IMPEDANCE (NORMALIZED)
V
GE
= V
CE
I
C
= 1mA
JC
(t) = r(t)Rθ
JC
D CURVES APPLY FOR POWER PULSE
TRAIN SHOWN READ TIME AT t1
T
J(PEAK)
- T
C
= P
(PEAK)
JC
(t)
1.3
NORMALIZED GATE THRESHOLD
VOLTAGE
1.2
1.1
1.0
0.9
0.8
0.7
10
D = 0.5
1.0
D = 0.2
0.1
D = 0.05
SINGLE PULSE
-50
0
+50
+100
+150
(
o
C)
0.01
0.01
0.1
T
C
, JUNCTION TEMPERATURE
1.0
10
t, TIME (ms)
100
1000
FIGURE 1. TYPICAL NORMALIZED GATE THRESHOLD VOLTAGE
AS A FUNCTION OF JUNCTION TEMPERATURE FOR
ALL TYPES
FIGURE 2. NORMALIZED THERMAL RESPONSE
CHARACTERISTICS FOR ALL TYPES
10
I
CE
, COLLECTOR CURRENT (A)
I
CE
, COLLECTOR CURRENT (A)
PULSE TEST, V
CE
= 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
7.5
10
V
GE
= +10V
V
GE
= +8V
7.5
V
GE
= +7V
V
GE
= +6V
V
GE
= +5V
T
C
= +25
o
C
5.0
+125
o
C
5.0
2.5
2.5
V
GE
= +4V
0
-40
o
C
+25
o
C
0
0
2.5
5.0
7.5
10
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
0
1
2
3
4
5
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3. TYPICAL TRANSFER CHARACTERISTICS FOR ALL
TYPES
10
PULSE TEST
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
FIGURE 4. TYPICAL SATURATION CHARACTERISTICS FOR
ALL TYPES
1200
f = 0.1MHz
1000
I
CE
, COLLECTOR CURRENT (A)
8
V
GE
= 10V
C, CAPACITANCE (pF)
800
6
600
CISS
4
400
200
CRSS
2
COSS
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
CE
, COLLECTOR-TO-EMITTER ON VOLTAGE (V)
0
0
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 5. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE
AS A FUNCTION OF COLLECTOR CURRENT FOR
ALL TYPES
FIGURE 6. CAPACITANCE AS A FUNCTION OF COLLECTOR-
TO-EMITTER VOLTAGE FOR ALL TYPES
3-3