Specifications 2N6975, 2N6976, 2N6977, 2N6978
Electrical Specifications
T
C
= +25
o
C, Unless Otherwise Specified
LIMITS
2N6975/2N6977
PARAMETERS
Collector-Emitter
Breakdown Voltage
Gate Threshold Voltage
SYMBOL
BV
CES
V
GE(TH)
l
CES
TEST CONDITIONS
l
C
= 1 mA, V
GE
= 0
V
GE
= V
CE
, I
C
= 1mA
V
CE
= 400V
V
CE
= 500V
T
C
= +125
o
C
V
CE
= 400V
V
CE
= 500V
Gate-Emitter Leakage Current
I
GES
I
ECS
V
CE(ON)
V
GE
=
±20V,
V
CE
= 0V
R
GE
= 0Ω, V
EC
= 5V
I
C
= 5A, V
GE
= 10V
I
C
= 10A, V
GE
= 20V
Gate-Emitter Plateau Voltage
V
GEP
Q
G(ON)
t
D(ON)
t
R
t
D(ON)
t
FI
I
C
= 5A, V
CE
= 10V
I
C
= 5A, V
CE
= 10V
I
C
= 5A
V
CE(CLP)
= 300V
L = 50µH
T
J
= +125
o
C
V
GE
= 10V
R
G
= 50Ω
2N6975
2N6976
2N6977
2N6978
Turn-Off
Energy Loss per Cycle
(Off Switching Dissipation=
W
OFF
x Frequency)
W
OFF
I
C
= 5A
V
CE(CLP)
= 300V
L = 50µH
T
J
= +125
o
C
V
GE
= 10V
R
G
= 50Ω
2N6975
2N6976
2N6977
2N6978
MIN
400
(Note 1)
2
(Note 1)
-
MAX
-
2N6976/2N6978
MIN
500
(Note 1)
2
(Note 1)
-
MAX
-
UNITS
V
4.5
(Note 1)
250
(Note 1)
-
4.5
(Note 1)
-
V
µA
µA
µA
µA
µA
ns
Zero Gate Voltage Collector
Current
-
-
250
(Note 1)
-
-
-
-
-
1000
(Note 1)
-
-
-
-
-
1000
(Note 1)
100
(Note 1)
5
(Note 1)
2
(Note 1)
2.5
6.8
(Note 1)
25
(Note 1)
-
100
(Note 1)
5
(Note 1)
2
(Note 1)
2.5
6.8
(Note 1)
25
(Note 1)
-
Reverse Collector-Emitter
Leakage Current
Collector-Emitter On Voltage
-
-
mA
-
-
V
-
3.4
(Note 1)
12
(Note 1)
-
3.4
(Note 1)
12
(Note 1)
V
V
On-State Gate Charge
nC
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
50 Max
50 Max
400 Max
(Note 1)
1000 Max
(Note 1)
500 Max
(Note 1)
1000 Max
(Note 1)
500 Max
(Note 1)
ns
ns
ns
Fall Time
ns
ns
µJ
µJ
Thermal Resistance
Junction-to-Case
NOTE:
1. JEDEC registered value.
R
θJC
1.25
(Note 1)
o
C/W
3-2
INTERSIL [ INTERSIL CORPORATION ]
