HIN202E, HIN206E, HIN207E, HIN208E, HIN211E, HIN213E, HIN232E
Die Characteris tics
METALLIZATION:
PASSIVATION:
Type: Al
Thickness: 10kÅ ±1kÅ
Type: Nitride over Silox
Nitride Thickness: 8kÅ
Silox Thickness: 7kÅ
SUBSTRATE POTENTIAL
TRANSISTOR COUNT:
GND
185
PROCESS:
CMOS Metal Gate
Metallization Mas k Layout
HIN232E
V-
C2-
C2+
C1-
PIN 6
PIN 5
PIN 4
PIN 3
PIN 2 V+
PIN 1 C1+
T2
PIN 7
PIN 8
OUT
R2
IN
T3
PIN 9
OUT
PIN 17 V
CC
R2
PIN 10
OUT
PIN 11
T2
PIN 12
T1
PIN 13
PIN 14
R1
PIN 15
T1
OUT
PIN 16
GND
R1
IN
IN
OUT
IN
FN4315.16
13
November 4, 2005