F-20
01/99
PJ32 Process
Silicon Junction Field-Effect Transistor
¥ General Purpose Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
Operating Junction Temperature, Tj
Storage Temperature, Ts
10 mA
+150°C
– 65°C to +175°C
G
G
Die Size = 0.018" X 0.018"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
Devices in this Databook based on the PJ32 Process.
Datasheet
2N5020, 2N5021
2N5460, 2N5461
2N5462
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
g
fs
C
iss
C
rss
e
N
¯
2.5
3.2
1.7
10
mS
pF
pF
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
–1
0.5
Min
30
Typ
50
1
2
– 15
7
Max
Unit
V
nA
mA
V
PJ32 Process
Test Conditions
I
G
= 1 µA, V
DS
= Ø
V
GS
= 15V, V
DS
= Ø
V
DS
= – 15V, V
GS
= Ø
V
DS
= – 15V, I
D
= 1 nA
V
DS
= – 15V, V
GS
= Ø
V
DS
= Ø, V
GS
= 10
V
DS
= Ø, V
GS
= 10
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 Hz
nV/√HZ V
DS
= 10V, V
GS
= Ø
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FAX
(972) 276-3375
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