欢迎访问ic37.com |
会员登录 免费注册
发布采购

TE28F160C3BA90 参数 Datasheet PDF下载

TE28F160C3BA90图片预览
型号: TE28F160C3BA90
PDF下载: 下载PDF文件 查看货源
内容描述: 高级+引导块闪存( C3 ) [Advanced+ Boot Block Flash Memory (C3)]
分类和应用: 闪存
文件页数/大小: 68 页 / 1132 K
品牌: INTEL [ INTEL ]
 浏览型号TE28F160C3BA90的Datasheet PDF文件第19页浏览型号TE28F160C3BA90的Datasheet PDF文件第20页浏览型号TE28F160C3BA90的Datasheet PDF文件第21页浏览型号TE28F160C3BA90的Datasheet PDF文件第22页浏览型号TE28F160C3BA90的Datasheet PDF文件第24页浏览型号TE28F160C3BA90的Datasheet PDF文件第25页浏览型号TE28F160C3BA90的Datasheet PDF文件第26页浏览型号TE28F160C3BA90的Datasheet PDF文件第27页  
£
Intel Advanced+ Boot Block Flash Memory (C3)  
4.3.1  
Suspending and Resuming Erase  
Since an Erase operation requires on the order of seconds to complete, an Erase Suspend command  
is provided to allow erase-sequence interruption in order to read data from—or program data to—  
another block in memory. Once the erase sequence is started, issuing the Erase Suspend command  
to the CUI suspends the erase sequence at a predetermined point in the erase algorithm. The status  
register will indicate if/when the Erase operation has been suspended. Erase-suspend latency is  
specified by t  
/t  
.
WHRH2 EHRH2  
A Read Array or Program command can now be issued to the CUI to read/program data from/to  
blocks other than that which is suspended. This nested Program command can subsequently be  
suspended to read yet another location. The only valid commands while Erase is suspended are  
Read Status Register, Read Identifier, CFI Query, Program Setup, Program Resume, Erase  
Resume, Lock Block, Unlock Block, and Lock-Down Block. During erase-suspend mode, the chip  
can be placed in a pseudo-standby mode by taking CE# to V , which reduces active current  
IH  
consumption.  
Erase Resume continues the erase sequence when CE# = V . Similar to the end of a standard  
IL  
Erase operation, the status register should be read and cleared before the next instruction is issued.  
Datasheet  
23