Chapter 5: DC and Switching Characteristics
Operating Conditions
5–3
Programming/Erasure Specifications
shows the MAX II device family programming/erasure specifications.
Table 5–3.
MAX II Device Programming/Erasure Specifications
Parameter
Erase and reprogram cycles
Note to
(1) This specification applies to the UFM and configuration flash memory (CFM) blocks.
Minimum
—
Typical
—
Maximum
100
Unit
Cycles
DC Electrical Characteristics
shows the MAX II device family DC electrical characteristics.
Table 5–4.
MAX II Device DC Electrical Characteristics
(Part 1 of 2)
Symbol
I
I
I
OZ
I
CCSTANDBY
Parameter
Input pin leakage
current
Tri-stated I/O pin
leakage current
V
CCINT
supply current
(standby)
Conditions
V
I
= V
CC IO
max to 0 V
V
O
= V
CC IO
max to 0 V
MAX II devices
MAX IIG devices
EPM240Z (Commercial
grade)
EPM240Z (Industrial
grade)
EPM570Z (Commercial
grade)
EPM570Z (Industrial
grade)
V
SCHMITT
I
CCPOWERUP
Hysteresis for Schmitt
trigger input
V
CCINT
supply current
during power-up
Value of I/O pin pull-up
resistor during user
mode and in-system
programming
V
C CIO
= 3.3 V
V
C CIO
= 2.5 V
MAX II devices
MAX IIG and MAX IIZ
devices
V
C CIO
= 3.3 V
V
C CIO
= 2.5 V
V
C CIO
= 1.8 V
V
C CIO
= 1.5 V
Minimum
–10
–10
—
—
—
—
—
—
—
—
—
—
5
10
25
45
Typical
—
—
12
2
25
25
27
27
400
190
55
40
—
—
—
—
Maximum
10
10
—
—
90
139
96
152
—
—
—
—
25
40
60
95
Unit
µA
µA
mA
mA
µA
µA
µA
µA
mV
mV
mA
mA
k
k
k
k
R
PULLUP
INTEL [ INTEL CORPORATION ]
