4–4
Chapter 4: Hot Socketing and Power-On Reset in MAX II Devices
Hot Socketing Feature Implementation in MAX II Devices
Figure 4–2.
Transistor-Level Diagram of MAX II Device I/O Buffers
VPAD
IOE Signal or the
Larger of VCCIO or VPAD
VCCIO
The Larger of
VCCIO or VPAD
Ensures 3.3-V
Tolerance and
Hot-Socket
Protection
IOE Signal
n+
n+
p+
p+
n - well
n+
p - well
p - substrate
The CMOS output drivers in the I/O pins intrinsically provide electrostatic discharge
(ESD) protection. There are two cases to consider for ESD voltage strikes: positive
voltage zap and negative voltage zap.
A positive ESD voltage zap occurs when a positive voltage is present on an I/O pin
due to an ESD charge event. This can cause the N+ (Drain)/ P-Substrate junction of
the N-channel drain to break down and the N+ (Drain)/P-Substrate/N+ (Source)
intrinsic bipolar transistor turn on to discharge ESD current from I/O pin to GND.
The dashed line (see
shows the ESD current discharge path during a
positive ESD zap.
Figure 4–3.
ESD Protection During Positive Voltage Zap
I/O
Source
PMOS
Gate
N+
D
Drain
I/O
Drain
P-Substrate
G
NMOS
Gate
N+
S
Source
GND
GND
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