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EPM1270GT144C5N 参数 Datasheet PDF下载

EPM1270GT144C5N图片预览
型号: EPM1270GT144C5N
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash PLD, 10ns, 980-Cell, CMOS, PQFP144, 22 X 22 MM, 0.50 MM PITCH, LEAD FREE, TQFP-144]
分类和应用: 输入元件可编程逻辑
文件页数/大小: 88 页 / 982 K
品牌: INTEL [ INTEL ]
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Chapter 4: Hot Socketing and Power-On Reset in MAX II Devices  
4–3  
Hot Socketing Feature Implementation in MAX II Devices  
1
Make sure that the VCCINT is within the recommended operating range even though  
SRAM download has completed.  
Each I/O and clock pin has the circuitry shown in Figure 4–1.  
Figure 4–1. Hot Socketing Circuit Block Diagram for MAX II Devices  
Power On  
Reset  
Monitor  
VCCIO  
Weak  
Pull-Up  
Resistor  
Output Enable  
PAD  
Voltage  
Hot Socket  
Tolerance  
Control  
Input Buffer  
to Logic Array  
The POR circuit monitors VCCINT and VCCIO voltage levels and keeps I/O pins tri-stated  
until the device has completed its flash memory configuration of the SRAM logic. The  
weak pull-up resistor (R) from the I/O pin to VCCIO is enabled during download to  
keep the I/O pins from floating. The 3.3-V tolerance control circuit permits the I/O  
pins to be driven by 3.3 V before VCCIO and/or VCCINT are powered, and it prevents the  
I/O pins from driving out when the device is not fully powered or operational. The  
hot socket circuit prevents I/O pins from internally powering VCCIO and VCCINT when  
driven by external signals before the device is powered.  
f
For information about 5.0-V tolerance, refer to the Using MAX II Devices in Multi-  
Voltage Systems chapter in the MAX II Device Handbook.  
Figure 4–2 shows a transistor-level cross section of the MAX II device I/O buffers.  
This design ensures that the output buffers do not drive when VCCIO is powered before  
VCCINT or if the I/O pad voltage is higher than VCCIO. This also applies for sudden  
voltage spikes during hot insertion. The VPAD leakage current charges the 3.3-V  
tolerant circuit capacitance.  
© October 2008 Altera Corporation  
MAX II Device Handbook  
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