欢迎访问ic37.com |
会员登录 免费注册
发布采购

E28F200CVT80 参数 Datasheet PDF下载

E28F200CVT80图片预览
型号: E28F200CVT80
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位SmartVoltage引导块闪存系列 [2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY]
分类和应用: 闪存
文件页数/大小: 55 页 / 633 K
品牌: INTEL [ INTEL ]
 浏览型号E28F200CVT80的Datasheet PDF文件第2页浏览型号E28F200CVT80的Datasheet PDF文件第3页浏览型号E28F200CVT80的Datasheet PDF文件第4页浏览型号E28F200CVT80的Datasheet PDF文件第5页浏览型号E28F200CVT80的Datasheet PDF文件第7页浏览型号E28F200CVT80的Datasheet PDF文件第8页浏览型号E28F200CVT80的Datasheet PDF文件第9页浏览型号E28F200CVT80的Datasheet PDF文件第10页  
2-MBIT SmartVoltage BOOT BLOCK FAMILY  
E
Separately erasable blocks, including a hardware-  
lockable boot block (16,384 bytes), two parameter  
blocks (8,192 bytes each) and main blocks (one  
block of 98,304 bytes and one block of 131,072  
bytes), define the boot block flash family  
architecture. See Figures 7 and 8 for memory  
maps. Each block can be independently erased and  
programmed 100,000 times at commercial  
temperature or 10,000 times at extended  
temperature.  
Additionally, the RP# pin provides protection  
against unwanted command writes due to invalid  
system bus conditions that may occur during  
system reset and power-up/down sequences. For  
example, when the flash memory powers-up, it  
automatically defaults to the read array mode, but  
during  
a
warm system reset, where power  
continues uninterrupted to the system components,  
the flash memory could remain in a non-read mode,  
such as erase. Consequently, the system Reset  
signal should be tied to RP# to reset the memory to  
normal read mode upon activation of the Reset  
signal. See Section 3.6.  
The boot block is located at either the top (denoted  
by -T suffix) or the bottom (-B suffix) of the address  
map in order to accommodate different  
microprocessor protocols for boot code location.  
The hardware-lockable boot block provides  
complete code security for the kernel code required  
for system initialization. Locking and unlocking of  
the boot block is controlled by WP# and/or RP#  
(see Section 3.4 for details).  
The 28F200 provides both byte-wide or word-wide  
input/output, which is controlled by the BYTE# pin.  
Please see Table 2 and Figure 16 for a detailed  
description of BYTE# operations, especially the  
usage of the DQ15/A–1 pin.  
The 28F200 products are available in  
a
The Command User Interface (CUI) serves as the  
ROM/EPROM-compatible pinout and housed in the  
44-lead PSOP (Plastic Small Outline) package, the  
48-lead TSOP (Thin Small Outline, 1.2 mm thick)  
package and the 56-lead TSOP as shown in  
interface  
between  
the  
microprocessor  
or  
microcontroller and the internal operation of the  
boot block flash memory products. The internal  
Write State Machine (WSM) automatically executes  
the algorithms and timings necessary for program  
and erase operations, including verifications,  
thereby unburdening the microprocessor or  
microcontroller of these tasks. The Status Register  
(SR) indicates the status of the WSM and whether it  
successfully completed the desired program or  
erase operation.  
Figures 4,  
5 and 6, respectively. The 28F002  
products are available in the 40-lead TSOP  
package as shown in Figure 3.  
Refer to the DC Characteristics, Section 4.4  
(commercial temperature) and Section 4.11  
(extended temperature), for complete current and  
voltage specifications. Refer to the AC  
Characteristics,  
Section  
4.5  
(commercial  
Program and Erase Automation allows program and  
erase operations to be executed using an industry-  
standard two-write command sequence to the CUI.  
Data programming is performed in word (28F200  
family) or byte (28F200 or 28F002B families)  
increments. Each byte or word in the flash memory  
can be programmed independently of other memory  
locations, unlike erases, which erase all locations  
within a block simultaneously.  
temperature) and Section 4.12 (extended  
temperature), for read, write and erase performance  
specifications.  
1.3  
Applications  
The 2-Mbit boot block flash memory family  
combines high-density, low-power, high-  
performance, cost-effective flash memories with  
blocking and hardware protection capabilities. Their  
flexibility and versatility reduce costs throughout the  
product life cycle. Flash memory is ideal for Just-In-  
Time production flow, reducing system inventory  
and costs, and eliminating component handling  
during the production phase.  
The 2-Mbit SmartVoltage boot block flash memory  
family is also designed with an Automatic Power  
Savings (APS) feature which minimizes system  
battery current drain, allowing for very low power  
designs. To provide even greater power savings,  
the boot block family includes a deep power-down  
mode which minimizes power consumption by  
turning most of the flash memory’s circuitry off. This  
mode is controlled by the RP# pin and its usage is  
discussed in Section 3.5, along with other power  
consumption issues.  
When your product is in the end-user’s hands, and  
updates or feature enhancements become  
necessary, flash memory reduces the update costs  
by allowing user-performed code changes instead  
of costly product returns or technician calls.  
6
SEE NEW DESIGN RECOMMENDATIONS