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5SGSED6K2F40C2N 参数 Datasheet PDF下载

5SGSED6K2F40C2N图片预览
型号: 5SGSED6K2F40C2N
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 583000-Cell, CMOS, PBGA1517, FBGA-1517]
分类和应用: 可编程逻辑
文件页数/大小: 72 页 / 1228 K
品牌: INTEL [ INTEL ]
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Page 12  
Electrical Characteristics  
Table 13. OCT Variation after Power-Up Calibration for Stratix V Devices (Part 2 of 2) (1)  
Symbol  
Description  
VCCIO (V)  
3.0  
Typical  
0.189  
0.208  
0.266  
0.273  
0.317  
Unit  
2.5  
OCT variation with temperature  
without recalibration  
dR/dT  
1.8  
%/°C  
1.5  
1.2  
Note to Table 13:  
(1) Valid for a VCCIO range of 5% and a temperature range of 0° to 85°C.  
Pin Capacitance  
Table 14 lists the Stratix V device family pin capacitance.  
Table 14. Pin Capacitance for Stratix V Devices  
Symbol  
Description  
Value  
Unit  
pF  
CIOTB  
Input capacitance on the top and bottom I/O pins  
Input capacitance on the left and right I/O pins  
6
6
6
CIOLR  
COUTFB  
pF  
Input capacitance on dual-purpose clock output and feedback pins  
pF  
Hot Socketing  
Table 15 lists the hot socketing specifications for Stratix V devices.  
Table 15. Hot Socketing Specifications for Stratix V Devices  
Symbol  
IIOPIN (DC)  
Description  
DC current per I/O pin  
Maximum  
300 A  
8 mA (1)  
100 mA  
50 mA  
IIOPIN (AC)  
AC current per I/O pin  
IXCVR-TX (DC)  
DC current per transceiver transmitter pin  
DC current per transceiver receiver pin  
IXCVR-RX (DC)  
Note to Table 15:  
(1) The I/O ramp rate is 10 ns or more. For ramp rates faster than 10 ns, |IIOPIN| = C dv/dt, in which C is the I/O pin  
capacitance and dv/dt is the slew rate.  
Stratix V Device Datasheet  
December 2015 Altera Corporation