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370 参数 Datasheet PDF下载

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型号: 370
PDF下载: 下载PDF文件 查看货源
内容描述: 90纳米制程的赛扬M处理器 [Celeron M Processor on 90 nm Process]
分类和应用:
文件页数/大小: 68 页 / 864 K
品牌: INTEL [ INTEL ]
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Thermal Specifications and Design Considerations  
Table 17.  
Power Specifications for the Celeron M Processor (Sheet 2 of 2)  
Deep Sleep Power at:  
390  
380  
370  
360J  
360  
350J  
350  
383  
373  
353  
VCC2  
8.8  
8.8  
8.8  
8.8  
8.8  
8.8  
8.8  
1.4  
1.4  
1.4  
100  
VCC2  
VCC2  
VCC2  
At 35°C,  
Note 2,5,6  
PDSLP  
1.260 V  
W
VCC2  
1.260 V  
VCC3  
VCC3  
0.940 V  
TJ  
Junction Temperature  
0
°C  
Notes 3, 4  
NOTES:  
1.  
2.  
3.  
4.  
5.  
The Thermal Design Power (TDP) specification should be used to design the processor thermal solution.  
The TDP is not the maximum theoretical power the processor can dissipate.  
Not 100% tested. These power specifications are determined by characterization of the processor currents  
at higher temperatures and extrapolating the values for the temperature indicated.  
As measured by the on-die Intel Thermal Monitor. The Intel Thermal Monitor’s automatic mode is used to  
indicate that the maximum TJ has been reached. Refer to Section 5.1 for more details.  
The Intel Thermal Monitor automatic mode must be enabled for the processor to operate within  
specifications.  
Intel processor numbers are not a measure of performance. Processor numbers differentiate features  
within each processor family, not across different processor families. See www.intel.com/products/  
processor_number for details.  
6.  
See Table 4 for VCC2 and VCC3.  
5.1  
Thermal Specifications  
5.1.1  
Thermal Diode  
The Celeron M processor incorporates two methods of monitoring die temperature, the  
Intel Thermal Monitor and the thermal diode. The Intel Thermal Monitor (detailed in  
Section 5.1) must be used to determine when the maximum specified processor  
junction temperature has been reached. The second method, the thermal diode, can be  
read by an off-die analog/digital converter (a thermal sensor) located on the  
motherboard, or a stand-alone measurement kit. The thermal diode may be used to  
monitor the die temperature of the processor for thermal management or  
instrumentation purposes but cannot be used to indicate that the maximum TJ of the  
processor has been reached. When using the thermal diode, a temperature offset value  
must be read from a processor Model Specific register (MSR) and applied. See  
Section 5.1.2 for more details. Please see Section 5.1.3 for thermal diode usage  
recommendation when the PROCHOT# signal is not asserted. Table 18 and Table 19  
provide the diode interface and specifications.  
Note:  
The reading of the external thermal sensor (on the motherboard) connected to the  
processor thermal diode signals, will not necessarily reflect the temperature of the  
hottest location on the die. This is due to inaccuracies in the external thermal sensor,  
on-die temperature gradients between the location of the thermal diode and the hottest  
location on the die, and time based variations in the die temperature measurement.  
Time based variations can occur when the sampling rate of the thermal diode (by the  
thermal sensor) is slower than the rate at which the TJ temperature can change.  
Datasheet  
65  
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