欢迎访问ic37.com |
会员登录 免费注册
发布采购

317607-001 参数 Datasheet PDF下载

317607-001图片预览
型号: 317607-001
PDF下载: 下载PDF文件 查看货源
内容描述: Express芯片组 [Express Chipset]
分类和应用:
文件页数/大小: 351 页 / 2481 K
品牌: INTEL [ INTEL ]
 浏览型号317607-001的Datasheet PDF文件第20页浏览型号317607-001的Datasheet PDF文件第21页浏览型号317607-001的Datasheet PDF文件第22页浏览型号317607-001的Datasheet PDF文件第23页浏览型号317607-001的Datasheet PDF文件第25页浏览型号317607-001的Datasheet PDF文件第26页浏览型号317607-001的Datasheet PDF文件第27页浏览型号317607-001的Datasheet PDF文件第28页  
Introduction  
1.3.2  
System Memory Interface  
The GMCH integrates a system memory DDR2 controller with two, 64-bit wide  
interfaces. Only Double Data Rate (DDR2) memory is supported; consequently, the  
buffers support only SSTL_1.8 V signal interfaces. The memory controller interface is  
fully configurable through a set of control registers.  
System Memory Interface Details  
The GMCH System Memory Controller directly supports one or two channels of  
memory (each channel consisting of 64 data lines)  
The memory channels are asymmetric: "Flex Memory" channels are assigned  
addresses serially. Channel B addresses are assigned after all Channel A  
addresses  
The memory channels are interleaved: Addresses are ping-ponged between  
the channels after each cache line (64-B boundary)  
Supports DDR2 memory DIMM frequencies of 533, 667 and 800 MHz. The speed  
used in all channels is the speed of the slowest DIMM in the system  
I/O Voltage of 1.8 V for DDR2  
Supports only unbuffered DIMMs  
Supports maximum memory bandwidth of 6.4 GB/s in single-channel or dual-  
channel asymmetric mode, or 12.8 GB/s in dual-channel interleaved mode  
assuming DDR2 800MHz  
Supports 256-Mb, 512-Mb, and 1-Gb technologies for x8 and x16 devices  
Supports four banks for all DDR2 devices up to 512-Mbit density. Supports eight  
banks for 1-Gbit DDR2 devices  
Using 256 Mb technologies, the smallest memory capacity possible is 128 MB,  
assuming Single-Channel Mode. (8 K rows * 512 columns * 1 cell/(row * column)  
* 16 b/cell * 4 banks/devices * 4 devices/DIMM-side * 1 DIMM-side/channel * 1  
channel * 1 B/8 b * 1 M/1024 K = 128 MB)  
By using 1 Gb technology in Dual Channel Interleaved Mode, the largest memory  
capacity possible is 8 GB. (16 K rows * 1 K columns * 1 cell/(row * column) * 8  
b/cell * 8 banks/device * 8 devices/DIMM-side * 4 DIMM-sides/channel * 2  
channels * 1 B/8 b * 1 G/1024 M * 1 M/(K*K) = 8 GB)  
Maximum DRAM address decode space is 8 GB (assuming 36-bit addressing)  
Supports up to 32 simultaneous open pages per channel (assuming 4 ranks of 8  
bank devices)  
Supports opportunistic refresh scheme  
Supports Partial Writes to memory using Data Mask (DM) signals  
Supports page sizes of 4 KB, 8 KB, and 16 KB  
Supports a burst length of 8 for single-channel and dual-channel interleaved and  
asymmetric operating modes  
Improved flexible memory architecture  
24  
Datasheet  
 
 复制成功!