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28F640P3 参数 Datasheet PDF下载

28F640P3图片预览
型号: 28F640P3
PDF下载: 下载PDF文件 查看货源
内容描述: 英特尔的StrataFlash嵌入式存储器 [Intel StrataFlash Embedded Memory]
分类和应用: 存储
文件页数/大小: 102 页 / 1616 K
品牌: INTEL [ INTEL ]
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1-Gbit P30 Family  
9.0  
Device Operations  
This section provides an overview of device operations. The system CPU provides control of all in-  
system read, write, and erase operations of the device via the system bus. The on-chip Write State  
Machine (WSM) manages all block-erase and word-program algorithms.  
Device commands are written to the Command User Interface (CUI) to control all flash memory  
device operations. The CUI does not occupy an addressable memory location; it is the mechanism  
through which the flash device is controlled.  
9.1  
Bus Operations  
CE# low and RST# high enable device read operations. The device internally decodes upper  
address inputs to determine the accessed block. ADV# low opens the internal address latches. OE#  
low activates the outputs and gates selected data onto the I/O bus.  
In asynchronous mode, the address is latched when ADV# goes high or continuously flows through  
if ADV# is held low. In synchronous mode, the address is latched by the first of either the rising  
ADV# edge or the next valid CLK edge with ADV# low (WE# and RST# must be VIH; CE# must  
be VIL).  
Bus cycles to/from the P30 device conform to standard microprocessor bus operations. Table 19  
summarizes the bus operations and the logic levels that must be applied to the device control signal  
inputs.  
Table 19.  
Bus Operations Summary  
Bus Operation  
RST#  
CLK  
ADV#  
CE#  
OE#  
WE#  
WAIT  
DQ[15:0] Notes  
Asynchronous  
Synchronous  
V
V
V
V
V
X
L
L
L
L
L
L
H
H
L
Deasserted  
Driven  
Output  
Output  
IH  
IH  
IH  
IH  
IH  
Read  
Write  
Running  
X
X
X
X
L
L
H
H
X
X
High-Z  
Input  
1
2
Output Disable  
Standby  
X
X
X
L
H
X
X
High-Z  
High-Z  
High-Z  
High-Z  
H
X
High-Z  
2
Reset  
V
High-Z  
2,3  
IL  
Notes:  
1.  
2.  
3.  
Refer to the Table 20, “Command Bus Cycles” on page 50 for valid DQ[15:0] during a write operation.  
X = Don’t Care (H or L).  
RST# must be at V ± 0.2 V to meet the maximum specified power-down current.  
SS  
9.1.1  
Reads  
To perform a read operation, RST# and WE# must be deasserted while CE# and OE# are asserted.  
CE# is the device-select control. When asserted, it enables the flash memory device. OE# is the  
data-output control. When asserted, the addressed flash memory data is driven onto the I/O bus.  
See Section 10.0, “Read Operations” on page 53 for details on the available read modes, and see  
Section 14.0, “Special Read States” on page 75 for details regarding the available read states.  
April 2005  
48  
Intel StrataFlash® Embedded Memory (P30)  
Order Number: 306666, Revision: 001  
Datasheet