1-Gbit P30 Family
7.5
Program and Erase Characteristics
V
V
PPH
PPL
Num
Symbol
Parameter
Units Notes
Min Typ Max Min Typ Max
Conventional Word Programming
Single word
-
-
90
30
200
60
-
-
85
30
190
60
Program
Time
W200
t
µs
µs
1
1
PROG/W
Single cell
Buffered Programming
W200
W251
t
t
Single word
-
-
90
200
-
-
85
190
Program
Time
PROG/W
32-word buffer
440 880
340 680
BUFF
Buffered Enhanced Factory Programming
W451
t
t
Single word
n/a
n/a
n/a
n/a
n/a
n/a
-
10
-
-
-
1,2
1
BEFP/W
Program
µs
BEFP/
W452
BEFP Setup
5
Setup
Erasing and Suspending
W500
W501
W600
W601
t
t
t
t
32-KByte Parameter
128-KByte Main
Program suspend
Erase suspend
-
-
-
-
0.4
1.2
20
2.5
4.0
25
-
-
-
-
0.4
1.0
20
2.5
4.0
25
ERS/PB
ERS/MB
SUSP/P
SUSP/E
Erase Time
s
1
Suspend
Latency
µs
20
25
20
25
Notes:
1.
Typical values measured at T = +25 °C and nominal voltages. Performance numbers are valid for all
C
speed versions. Excludes system overhead. Sampled, but not 100% tested.
Averaged over entire device.
2.
Datasheet
Intel StrataFlash® Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
45
INTEL [ INTEL ]
