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28F016SV 参数 Datasheet PDF下载

28F016SV图片预览
型号: 28F016SV
PDF下载: 下载PDF文件 查看货源
内容描述: 16 - MBIT (1 MBIT ×16 , 2 MBIT ×8) FlashFile记忆 [16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY]
分类和应用:
文件页数/大小: 63 页 / 633 K
品牌: INTEL [ INTEL ]
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28F016SV FlashFile™ MEMORY  
E
2.1 Lead Descriptions (Continued)  
Symbol  
Type  
Name and Function  
RY/BY#  
OPEN DRAIN READY/BUSY: Indicates status of the internal WSM. When low, it  
OUTPUT  
INPUT  
indicates that the WSM is busy performing an operation. RY/BY# floating  
indicates that the WSM is ready for new operations (or WSM has  
completed all pending operations), or erase is suspended, or the device is  
in deep power-down mode. This output is always active (i.e., not floated  
to tri-state off when OE# or CE0#, CE1# are high), except if a RY/BY# Pin  
Disable command is issued.  
WP#  
WRITE PROTECT: Erase blocks can be locked by writing a nonvolatile  
lock-bit for each block. When WP# is low, those locked blocks as  
reflected by the Block-Lock Status bits (BSR.6), are protected from  
inadvertent data programs or erases. When WP# is high, all blocks can  
be written or erased regardless of the state of the lock-bits. The WP#  
input buffer is disabled when RP# transitions low (deep power-down  
mode).  
BYTE#  
3/5#  
INPUT  
INPUT  
BYTE ENABLE: BYTE# low places device in x8 mode. All data is then  
input or output on DQ0–7, and DQ8–15 float. Address A0 selects between  
the high and low byte. BYTE# high places the device in x16 mode, and  
turns off the A0 input buffer. Address A1 then becomes the lowest order  
,
address.  
3.3/5.0 VOLT SELECT: 3/5# high configures internal circuits for 3.3V  
operation. 3/5# low configures internal circuits for 5V operation.  
NOTE:  
Reading the array with 3/5# high in a 5V system could damage the  
device. Reference the power-up and reset timings (Section 5.7) for 3/5#  
switching delay to valid data.  
VPP  
SUPPLY  
PROGRAM/ERASE POWER SUPPLY (12V ± 0.6V, 5V ± 0.5V) : For  
erasing memory array blocks or writing words/bytes/pages into the flash  
array. VPP = 5V ± 0.5V eliminates the need for a 12V converter, while  
connection to 12V ± 0.6V maximizes Program/Erase Performance.  
NOTE:  
Successful completion of program and erase attempts is inhibited with  
VPP at or below 1.5V. Program and erase attempts with VPP between 1.5V  
and 4.5V, between 5.5V and 11.4V, and above 12.6V produce spurious  
results and should not be attempted.  
VCC  
SUPPLY  
DEVICE POWER SUPPLY (3.3V ± 0.3V, 5V ± 0.5V, 5.0 ± 0.25V):  
To switch 3.3V to 5V (or vice versa), first ramp VCC down to GND, and  
then power to the new VCC voltage.  
Do not leave any power pins floating.  
GND  
NC  
SUPPLY  
GROUND FOR ALL INTERNAL CIRCUITRY:  
Do not leave any ground pins floating.  
NO CONNECT:  
Lead may be driven or left floating.  
12