欢迎访问ic37.com |
会员登录 免费注册
发布采购

28F016B3 参数 Datasheet PDF下载

28F016B3图片预览
型号: 28F016B3
PDF下载: 下载PDF文件 查看货源
内容描述: 智能3高级启动块4-, 8-,16- , 32兆位闪存系列 [SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY]
分类和应用: 闪存
文件页数/大小: 48 页 / 296 K
品牌: INTEL [ INTEL ]
 浏览型号28F016B3的Datasheet PDF文件第6页浏览型号28F016B3的Datasheet PDF文件第7页浏览型号28F016B3的Datasheet PDF文件第8页浏览型号28F016B3的Datasheet PDF文件第9页浏览型号28F016B3的Datasheet PDF文件第11页浏览型号28F016B3的Datasheet PDF文件第12页浏览型号28F016B3的Datasheet PDF文件第13页浏览型号28F016B3的Datasheet PDF文件第14页  
SMART 3 ADVANCED BOOT BLOCK  
E
The pin descriptions table details the usage of each device pin.  
Table 2. Smart 3 Advanced Boot Block Pin Descriptions  
Symbol  
Type  
Name and Function  
ADDRESS INPUTS for memory addresses. Addresses are internally  
latched during a program or erase cycle.  
A0–A21  
INPUT  
28F008B3: A[0-19], 28F016B3: A[0-20], 28F032B3: A[0-21],  
28F800B3: A[0-17], 28F800B3: A[0-18], 28F160B3: A[0-19],  
28F320B3: A[0-20]  
DQ0–DQ7  
INPUT/OUTPUT DATA INPUTS/OUTPUTS: Inputs array data on the second CE# and  
WE# cycle during a Program command. Inputs commands to the  
Command User Interface when CE# and WE# are active. Data is  
internally latched. Outputs array, identifier and status register data. The  
data pins float to tri-state when the chip is de-selected or the outputs are  
disabled.  
DQ8–DQ15 INPUT/OUTPUT DATA INPUTS/OUTPUTS: Inputs array data on the second CE# and  
WE# cycle during a Program command. Data is internally latched.  
Outputs array and identifier data. The data pins float to tri-state when the  
chip is de-selected. Not included on x8 products.  
CE#  
INPUT  
CHIP ENABLE: Activates the internal control logic, input buffers,  
decoders and sense amplifiers. CE# is active low. CE# high de-selects  
the memory device and reduces power consumption to standby levels.  
OE#  
WE#  
INPUT  
INPUT  
OUTPUT ENABLE: Enables the device’s outputs through the data  
buffers during a read operation. OE# is active low.  
WRITE ENABLE: Controls writes to the Command Register and memory  
array. WE# is active low. Addresses and data are latched on the rising  
edge of the second WE# pulse.  
RP#  
INPUT  
RESET/DEEP POWER-DOWN: Uses two voltage levels (VIL, VIH) to  
control reset/deep power-down mode.  
When RP# is at logic low, the device is in reset/deep power-down  
mode, which drives the outputs to High-Z, resets the Write State  
Machine, and minimizes current levels (ICCD).  
When RP# is at logic high, the device is in standard operation.  
When RP# transitions from logic-low to logic-high, the device resets all  
blocks to locked and defaults to the read array mode.  
WP#  
INPUT  
WRITE PROTECT: Provides a method for locking and unlocking the two  
lockable parameter blocks.  
When WP# is at logic low, the lockable blocks are locked,  
preventing program and erase operations to those blocks. If a program  
or erase operation is attempted on a locked block, SR.1 and either SR.4  
[program] or SR.5 [erase] will be set to indicate the operation failed.  
When WP# is at logic high, the lockable blocks are unlocked and  
can be programmed or erased.  
See Section 3.3 for details on write protection.  
10  
PRELIMINARY