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28F0101024K 参数 Datasheet PDF下载

28F0101024K图片预览
型号: 28F0101024K
PDF下载: 下载PDF文件 查看货源
内容描述: 28F010 1024K ( 128K ×8 )的CMOS FLASH MEMORY [28F010 1024K (128K X 8) CMOS FLASH MEMORY]
分类和应用:
文件页数/大小: 33 页 / 894 K
品牌: INTEL [ INTEL ]
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28F010  
E
is necessary to write another valid command into  
the register.  
point, the verify operation is terminated by writing a  
valid command (e.g., Program Set-Up) to the  
command register. Figure 5, the 28F010 Quick-  
Erase Algorithm flowchart, illustrates how  
commands and bus operations are combined to  
perform electrical erasure of the 28F010. Refer to  
AC Characteristics—Write/Erase/Program Only  
Operations and waveforms for specific timing  
parameters.  
2.2.2.3  
Set-Up Erase/Erase Commands  
Set-Up Erase is a command-only operation that  
stages the device for electrical erasure of all bytes  
in the array. The set-up erase operation is  
performed by writing 20H to the command register.  
To commence chip-erasure, the Erase command  
(20H) must again be written to the register. The  
erase operation begins with the rising edge of the  
WE# pulse and terminates with the rising edge of  
the next WE# pulse (i.e., Erase Verify command).  
2.2.2.5  
Set-Up Program/Program  
Commands  
Set-up program is a command-only operation that  
stages the device for byte programming. Writing  
40H into the command register performs the set-up  
operation.  
This two-step sequence of set-up followed by  
execution ensures that memory contents are not  
accidentally erased. Also, chip-erasure can only  
occur when high voltage is applied to the pin. In the  
absence of this high voltage, memory contents are  
protected against erasure. Refer to AC  
Characteristics—Write/Erase/Program Only Oper-  
ations and waveforms for specific timing  
parameters.  
Once the program set-up operation is performed,  
the next WE# pulse causes a transition to an active  
programming operation. Addresses are internally  
latched on the falling edge of the WE# pulse. Data  
is internally latched on the rising edge of the WE#  
pulse. The rising edge of WE# also begins the  
programming  
operation.  
The  
programming  
operation terminates with the next rising edge of  
WE#, used to write the Program Verify command.  
Refer to AC Characteristics—Write/Erase/Program  
Only Operations and Waveforms for specific timing  
parameters.  
2.2.2.4  
Erase Verify Command  
The Erase command erases all bytes of the array in  
parallel. After each erase operation, all bytes must  
be verified. The erase verify operation is initiated by  
writing A0H into the command register. The  
address for the byte to be verified must be supplied  
as it is latched on the falling edge of the WE# pulse.  
The register write terminates the erase operation  
with the rising edge of its WE# pulse.  
2.2.2.6  
Program Verify Command  
The 28F010 is programmed on a byte-by-byte  
basis. Byte programming may occur sequentially or  
at random. Following each programming operation,  
the byte just programmed must be verified.  
The 28F010 applies an internally-generated margin  
voltage to the addressed byte. Reading FFH from  
the addressed byte indicates that all bits in the byte  
are erased.  
The program verify operation is initiated by writing  
C0H into the command register. The register write  
terminates the programming operation with the  
rising edge of its WE# pulse. The program verify  
operation stages the device for verification of the  
byte last programmed. No new address information  
is latched.  
The Erase Verify command must be written to the  
command register prior to each byte verification to  
latch its address. The process continues for each  
byte in the array until a byte does not return FFH  
data, or the last address is accessed.  
The 28F010 applies an internally-generated margin  
voltage to the byte. A microprocessor read cycle  
outputs the data. A successful comparison between  
the programmed byte and true data means that the  
byte is successfully programmed. Programming  
then proceeds to the next desired byte location.  
Figure 5, the 28F010 Quick-Pulse Programming  
Algorithm flowchart, illustrates how commands are  
combined with bus operations to perform byte  
In the case where the data read is not FFH, another  
erase operation is performed. (Refer Section  
2.2.2.3,  
Set-Up  
Erase/Erase  
Commands.)  
Verification then resumes from the address of the  
last-verified byte. Once all bytes in the array have  
been verified, the erase step is complete. The  
device  
can  
be  
programmed.  
At  
this  
12